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december 2010 doc id 16091 rev 2 1/16 16 stgw45hf60wdi 45 a, 600 v ultra fast igbt with low drop diode features improved e off at elevated temperature low v f soft recovery antiparallel diode applications welding induction heating resonant converters description the stgw45hf60wdi is based on a new advanced planar technology concept to yield an igbt with more stable switching performance (e off) versus temperature, as well as lower conduction losses. the device is tailored to high switching frequency operation (over 100 khz). figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging stgw45hf60wdi gw45hf60wdi to-247 tu b e STGWA45HF60WDI 45hf60wdi to-247 long leads www.st.com
content stgw45hf60wdi 2/16 doc id 16091 rev 2 content 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 stgw45hf60wdi electrical ratings doc id 16091 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247 to-247 long leads v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 70 80 a i c (1) continuous collector current at t c = 100 c 45 50 a i cp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 150 a i cl (3) 3. v clamp = 80% (v ces ), v ge = 15 v, r g = 10 ? , t j = 150 c turn-off latching current 80 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge not repetitive forward current t p = 10 ms sinusoidal 130 a p tot total dissipation at t c = 25 c 250 310 w t stg storage temperature ? 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit to-247 to-247 long leads r thj-case thermal resistance junction-case igbt 0.5 0.4 c/w thermal resistance junction-case diode 1.5 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- = electrical characteristics stgw45hf60wdi 4/16 doc id 16091 rev 2 2 electrical characteristics (t j = 25 c unless othe rwise specified). table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15v, i c = 30 a, t j = 125 c 1.9 1.65 2.5 v v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 125 c 500 5 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 2900 260 55 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 400 v, i c = 30 a, v ge = 15 v figure 18 - 160 17 65 - nc nc nc table 6. switching off (inductive load) symbol parameter test conditions min. typ. max. unit t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a, r ge = 4.7 ? , v ge = 15 v figure 17 - 30 145 50 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a, r ge = 4.7 ? , v ge =15 v, t j = 125 c figure 17 - 47 185 65 - ns ns ns stgw45hf60wdi electrical characteristics doc id 16091 rev 2 5/16 table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e off turn-off switching losses v cc = 400 v, i c = 30 a r g =4.7 ? , v ge = 15 v, figure 19 - 330 j e off turn-off switching losses v cc = 400 v, i c = 30 a r g = 4.7 ? , v ge = 15 v, t j = 125 c, figure 19 - 550 800 j table 8. collector-emitter diode symbol parameter test cond itions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t j = 125 c - 1.4 1.2 1.8 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/ s figure 20 - 90 305 5.2 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, t j =125 c, di/dt = 100 a/ s figure 20 - 235 1100 9 - ns nc a electrical characteristics stgw45hf60wdi 6/16 doc id 16091 rev 2 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. normalized v ce(sat) vs. i c figure 5. normalized v ce(sat) vs. temperature figure 6. normalized breakdown voltage vs. temperature figure 7. normalized gate threshold voltage vs. temperature 6 # % 6 ) # ! 6 ' % 6 6 6 6 6 6 6 ' % 6 ) # ! 6 # % 6 ) # ! 6 # % s a t n o r m 4 * ? # 4 * ? # 4 * ? # 6 ' % 6 4 * ? # 6 # % s a t n o r m ! ) # ! ! ! ! ! ) # ! 6 ' % 6 4 * ? # 6 # % 3 n o r m ) # m ! 4 * ? # 6 ' % t h n o r m 6 ' % 6 # % ) # ? ! stgw45hf60wdi electrical characteristics doc id 16091 rev 2 7/16 figure 8. gate charge vs. gate-emitter voltage figure 9. capacitances variations figure 10. switching losses vs. temperature figure 11. switching losses vs. gate resistance figure 12. switching losses vs. collector current figure 13. turn-off soa 1 ' n # 6 ' % 6 6 # # 6 ) # ! 6 # % 6 f - ( z 6 ' % # i e s # o e s # r e s % ? * 4 * ? # 6 # % 6 6 ' % 6 ) # ! 2 ' % / & |